FACTS ABOUT GERMANIUM REVEALED

≤ 0.fifteen) is epitaxially developed over a SOI substrate. A thinner layer of Si is developed on this SiGe layer, and after that the composition is cycled through oxidizing and annealing levels. A result of the preferential oxidation of Si over Ge [sixty eight], the first Si1–s in biaxially compressive strained QWs from Shubnikov-de Haas or cy